Postdoctoral position for the development of Beyond-IGZO oxide semiconductor transistors

IGZO-channel transistors present an opportunity to revolutionize DRAM memory by dramatically improving its retention and power consumption. This is possible due to remarkably low IOFF values, down to 10-22 A/µm. While IGZO transistors are used in the display industry, their industrial application for (3D) DRAM is severely hindered by their reliability issues and sensitivity to hydrogen. 

imec has significantly contributed to IGZO development for DRAM applications by regularly demonstrating advancements at top-tier conferences (IEDM, VLSI, and IRPS) and providing technological insights and solutions to all major semiconductor manufacturers. Now, we are looking for a new team member who can make the next breakthrough in the oxide-semiconductors field by demonstrating the performance of a channel material at transistor level, with superior resilience to hydrogen. 

Given the vast array of potential material candidates, we utilize machine learning and ab initio virtual screening to pre-select the most promising industry-relevant options. The selected materials are then deposited in our facilities. At this point, it comes down to you—the successful candidate—to transform those pre-deposited layers into working transistors using LAB fabrication. This includes assessing the device performance, identifying the most promising materials, understanding the performance-guiding mechanisms, and providing guidelines for further virtual and experimental materials screening.  

The insights gained from this project are expected to expand the understanding of oxide semiconductors and provide crucial guidelines for their industrial application, particularly in the DRAM context. This research offers a unique opportunity to contribute to pioneering advancements in oxide semiconductor technology and work at the forefront of innovation. 

What you will do

• Fabricate thin-film transistors in a LAB cleanroom (starting from pre-deposited channel materials), creatively solve processing challenges, and assess the device sensitivities to processing steps. 
• Deepen the understanding of oxide semiconductors and the mechanisms guiding their performance through device electrical characterization (I-V, C-V, Hall tests) and concurrent thermal stressing. 
• Provide data-driven recommendations for further virtual and experimental oxide semiconductor screening. 
• Regularly present your findings within the team and to imec industrial partners, as well as publish them in international journals and present them at conferences. 

What we do for you

• A two-year funded full-time position. 
• Access to imec’s advanced FAB and LAB facilities and broad nanoelectronics expertise. 
• Multicultural and interdisciplinary environment enabling collaboration with world-recognized imec experts in device fabrication, performance, reliability, and material modeling.  
• You will be located at the modern and advanced imec Leuven campus, which is a world-class research institute. 

Who you are

• You have a Ph.D. degree in nanoelectronics, material science, semiconductor physics. 
• You showed excellence in your academic career through grades, awards, publications. 
• You have hands-on experience in transistor fabrication and/or electrical characterization.  
• You are well organized, able to prioritize activities, and deliver efficiently.  
• You can work independently, and, in a team, you are proactive, and results driven. 
• You are fluent in English.